| 摘要 |
PURPOSE: A gate electrode of a MOS transistor and a method for forming the same are provided to completely remove electrode forming material on a portion to be etched in patterning a gate electrode of the MOS transistor. CONSTITUTION: First, a sacrificial film(24) of a predetermined thickness is formed on a semiconductor substrate(21). Then, the semiconductor substrate(21) on a region on which a gate electrode will be formed is exposed by etching the sacrificial film(24) with an etching process using an exposure mask. Next, a gate oxide film(25) is formed on the exposed substrate(21). Then, a conductor film(26) completely covering the sacrificial film(24) is formed. Finally, the sacrificial film(24) is exposed and then the remaining sacrificial film is removed.
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