| 摘要 |
PURPOSE: A capacitor of a semiconductor device is provided to secure larger capacitance in a peripheral cell area than in a cell area, both areas being the same in dimension, thereby reducing the area of the peripheral circuit, by forming a dielectric layer having a mixture structure of NO/ONO, and by forming a stacked metal oxide semiconductor field effect transistor(MOSFET) in the peripheral circuit. CONSTITUTION: A capacitor of a semiconductor device comprises a dielectric layer including a first capacitor, a second capacitor, a thin film transistor(TFT) having a lightly doped drain(LDD) structure, an interlayer dielectric including a bulk transistor and a second TFT. The first capacitor is composed of a first plate electrode, a dielectric layer and a second charge conservation electrode(18), on a cell region of a semiconductor wafer having a field oxidation layer(2). The second capacitor is composed of a second charge conservation electrode, a dielectric layer and a second plate electrode, connected to the first capacitor through a contact hole formed on the interlayer dielectric. The TFT having the LDD structure is formed between the second capacitor and the interlayer dielectric. The interlayer dielectric including a bulk transistor is formed in the peripheral circuit region of the semiconductor wafer, the bulk transistor being a first transistor of the LDD structure. The second TFT is the LDD structure and formed on the interlayer dielectric.
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