METHOD FOR FORMING TANTALUM OXIDE FILM AND METHOD FOR FABRICATING TANTALUM OXIDE FILM CAPACITOR USING THEREOF

摘要

PURPOSE: A method for forming a Ta2O5 film and a method for fabricating a Ta2O5 capacitor using thereof are provided which can improve the leakage current of the Ta2O5 film by improving the thermal processing condition which is performed after forming the Ta2O5 film. CONSTITUTION: A method for forming a Ta2O5 film(13) includes the steps of: forming the Ta2O5 film on a substrate(10); annealing the Ta2O5 film in a furnace at a temperature ranging from 700 to 800°C using oxygen gas; and plasma-processing the Ta2O5 film at temperature ranging from 300 to 400°C using oxygen gas. And a method for fabricating a Ta2O5 capacitor includes the steps of: forming a bottom electrode(11) of the capacitor; forming a Ta2O5 film on the bottom electrode; annealing the Ta2O5 film in a furnace at a temperature ranging from 700 to 800°C using oxygen gas; and plasma-processing the Ta2O5 film at temperature ranging from 300 to 400°C using oxygen gas; and forming a top electrode(14) on the Ta2O5. The method removes carbon in the Ta2O5 by performing furnace annealing of the Ta2O5 and compensates oxygen in the Ta2O5 film by O2 or N2O gas plasma processing of the Ta2O5.