发明名称 |
HALFTONE PHASE SHIFT MASK FOR PROHIBITING SIDE LOBE |
摘要 |
PURPOSE: A halftone phase shift mask is provided to prevent a side lobe in order to increase the productivity of photolithographic process. CONSTITUTION: A halftone phase shift mask for preventing a side lobe consists of a quartz substrate(20), phase shifter patterns disposed on a surface of the quartz substrate, and chrome patterns(21) inserted in the phase shifter patterns of the side lobe anticipation regions.
|
申请公布号 |
KR20000041410(A) |
申请公布日期 |
2000.07.15 |
申请号 |
KR19980057269 |
申请日期 |
1998.12.22 |
申请人 |
HYUNDAI ELECTRONICS IND. CO., LTD. |
发明人 |
LEE, HYEONG DONG;LEE, SEONG GWON |
分类号 |
H01L21/027;(IPC1-7):H01L21/027 |
主分类号 |
H01L21/027 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|