发明名称 HALFTONE PHASE SHIFT MASK FOR PROHIBITING SIDE LOBE
摘要 PURPOSE: A halftone phase shift mask is provided to prevent a side lobe in order to increase the productivity of photolithographic process. CONSTITUTION: A halftone phase shift mask for preventing a side lobe consists of a quartz substrate(20), phase shifter patterns disposed on a surface of the quartz substrate, and chrome patterns(21) inserted in the phase shifter patterns of the side lobe anticipation regions.
申请公布号 KR20000041410(A) 申请公布日期 2000.07.15
申请号 KR19980057269 申请日期 1998.12.22
申请人 HYUNDAI ELECTRONICS IND. CO., LTD. 发明人 LEE, HYEONG DONG;LEE, SEONG GWON
分类号 H01L21/027;(IPC1-7):H01L21/027 主分类号 H01L21/027
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