METHOD FOR FORMING GATE ELECTRODE OF HIGHLY INTEGRATED MEMORY ELEMENT

摘要

PURPOSE: A method for forming a gate electrode is to make a reliable element by forming TiSix only on the gate electrode and to accomplish high integration of the element by forming an insulation film for SAC(self-aligned contact) on the gate electrode. CONSTITUTION: A method for producing a highly integrated memory element comprises: a first step of forming a gate insulating film(2) and a silicon film(3) for a gate electrode on a semiconductor layer in order and patterning them by using a gate mask; a second step of forming a first insulation film(6) on a side wall of the silicon film; a third step of depositing a second insulation film on entire surface of a matter resulted from the second step and etching of the second insulation film to expose a surface of the silicon film; a fourth step of etching an exposed silicon film by certain thickness to have a height lower than its peripheral first and second insulation films; a fifth step of forming a silicide film(8) of metal having a high melting point on the exposed silicon film to have a height lower than its peripheral first and second insulation films; and a sixth step of forming a third insulation film on the silicide film of metal having a high melting point to have a height equal to its peripheral first and second insulation films.