| 摘要 |
PURPOSE: A decoupling capacitor of semiconductor device is provided to realize decoupling capacitor in accumulation mode using triple well, thereby enabling high integration of semiconductor device. CONSTITUTION: A decoupling capacitor of semiconductor device comprises plural wells(3,2,4), a device division film(6), a gate oxide(7), a gate electrode(10), a transistor and plural well pickups(13,14,15). The wells(3,2,4) are formed on a P type substrate(1) through ion injection process. The device division film(6) is formed on a non-active area of the substrate(1), and the gate oxide(7) and the gate electrode(10) are formed on an active area. A N type source/drain junction area(11) and the N well pickup(13) in the well(3) are formed by injecting N type impurity on the substrate. The pickups(14,15) are respectively formed in the wells(2,4) by injecting p type impurity.
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