FABRICATION METHOD OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A fabrication method of semiconductor device is provided to perform two stage space etching processes to form the top of the spacer into a triangle shape, thereby increasing contact process margin and enhancing productivity and reliability. CONSTITUTION: A fabrication method of semiconductor device comprises steps of: forming a gate oxide film on a substrate; forming gate electrodes overlapped to a mask oxide pattern on the gate oxide film; forming an oxide film; etching the corners of the oxide film by argon sputtering; etching a front of the oxide film to form spacers on side wall of the gate electrodes and the mask oxide pattern, but forming a contact hole exposing the substrate on both sides of the gate electrodes and remaining the triangular oxide pattern on the mask oxide pattern; and forming a contact plug filling the contact hole.