| 摘要 |
PURPOSE: An electrostatic prevention structure of semiconductor device is provided to increase the width of MOS transistors consisting the electrostatic prevention circuit without increasing chip size, thereby electrostatic prevention characteristics. CONSTITUTION: An electrostatic prevention structure of semiconductor device comprises a semiconductor substrate(20), an active area(22), a gate electrode(23), source/drain areas(24a,24b), source/drain electrodes(26a,26b) respectively contacted to the source/drain areas(24a,24b) and an input pad(28). An input pad area and an electrostatic prevention circuit area are defined in the substrate(20). The electrostatic prevention circuit defined by a device division film on the substrate is formed on the active area(22). The gate electrode(23) is disposed in the active area. The source/drain areas(24a,24b) are disposed on the active areas in both sides of the gate electrode. The input pad(28) is contacted to the drain area and disposed on the active area.
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