| 摘要 |
PURPOSE: A current mirror type sensing amplifier is provided to precharge an output node(30) into voltage lever lower than the power voltage level in all disable sections except chip deselect section, thereby enhancing sensing speed. CONSTITUTION: A current mirror type sensing amplifier comprises PMOS transistors(21,22) as a current mirror unit, NMOS transistors(25,26) and a NMOS transistor(27). The NMOS transistors(25,26) are a sensing unit for sensing input data(db,dbb). The NMOS transistor(27) is an enable unit for enabling the NMOS transistors(25,26) by an enable signal(saen1). The amplifier precharge an output node(30) into power voltage level and into voltage lever lower than the power voltage level in chip deselect section and the other disable sections, respectively.
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