METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to simplify a MOSFET(Metal Oxide Semiconductor Field Effect Transistor) process and prevent a short channel effect. CONSTITUTION: A method for manufacturing a semiconductor device comprises the following steps. A pad oxide layer(11) and a first nitride layer are formed on a semiconductor substrate(10). A first nitride layer pattern is formed by removing the first nitride layer. A thermal oxide layer(13) is formed thereon. The first nitride layer pattern is removed. An LLD area is formed on the semiconductor substrate of both sides of the thermal oxide layer. A second nitride layer is formed on a whole surface of the structure. A second nitride layer pattern is formed by etching the second nitride layer. The semiconductor substrate is exposed by removing the thermal oxide layer. A gate oxide layer(16) is formed on the semiconductor substrate. A polycrystal silicon layer(17) is formed the whole surface of the structure. A gate electrode formed with a polycrystal silicon layer pattern is formed on the gate oxide layer by removing the polycrystal silicon layer formed on the upper portion of the second nitride layer. A spacer with the second nitride layer pattern remains by removing the second nitride layer. A source/drain area is formed on the exposed LLD area.