FABRICATION METHOD OF CAPACITOR FOR NON-VOLATILE MEMORY DEVICE

摘要

PURPOSE: A fabrication method of capacitor for non-volatile memory device is provided to improve surface roughness feature of a Pt upper electrode during heat treatment process under oxygen atmosphere after a contact hole is formed, thereby enhancing electric characteristics. CONSTITUTION: A fabrication method of capacitor for non-volatile memory device comprises: a first step forming a capacitor consisted of a lower electrode, ferroelectric film and Pt upper electrode; a second step forming an interlayer insulation film on overall structure; a third step selectively etching the interlayer insulation film to form a contact hole for exposing the Pt upper electrode; and a forth step performing heat treatment process under 600-700°C in order to compensate etching loss generated in the third step.