发明名称 CHEMICAL MECHANICAL POLISHING APPARATUS
摘要 PURPOSE: A chemical mechanical polishing apparatus is provided to be capable of detecting a polishing end point more exactly. CONSTITUTION: A chemical mechanical polishing apparatus comprises a polishing table support part(21) which supports a polishing table(22). A wafer support table(23) rotates a wafer(10) according to a driving by a motor(80), and has one plane connected to a rear surface of the wafer(10). A first vacuum pump(31) absorbs a polished substance existing on a pad of the polishing table(22). A gathering part(40) gathers a substance absorbed through the first vacuum pump(31), and an analyzer(50) analyzes the polished substance supplied from the gathering part(40). A second vacuum pump(32) absorbs the polished substance remaining at the analyzer after analyzing. A feedback system(70) receives an analyzed result to control an operation of the motor.
申请公布号 KR20000044598(A) 申请公布日期 2000.07.15
申请号 KR19980061097 申请日期 1998.12.30
申请人 HYUNDAI ELECTRONICS IND. CO., LTD. 发明人 PARK, HYUNG SUN;LEE, SANG IK;KIM, CHANG IL
分类号 H01L21/304;(IPC1-7):H01L21/304 主分类号 H01L21/304
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