发明名称 |
CHEMICAL MECHANICAL POLISHING APPARATUS |
摘要 |
PURPOSE: A chemical mechanical polishing apparatus is provided to be capable of detecting a polishing end point more exactly. CONSTITUTION: A chemical mechanical polishing apparatus comprises a polishing table support part(21) which supports a polishing table(22). A wafer support table(23) rotates a wafer(10) according to a driving by a motor(80), and has one plane connected to a rear surface of the wafer(10). A first vacuum pump(31) absorbs a polished substance existing on a pad of the polishing table(22). A gathering part(40) gathers a substance absorbed through the first vacuum pump(31), and an analyzer(50) analyzes the polished substance supplied from the gathering part(40). A second vacuum pump(32) absorbs the polished substance remaining at the analyzer after analyzing. A feedback system(70) receives an analyzed result to control an operation of the motor.
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申请公布号 |
KR20000044598(A) |
申请公布日期 |
2000.07.15 |
申请号 |
KR19980061097 |
申请日期 |
1998.12.30 |
申请人 |
HYUNDAI ELECTRONICS IND. CO., LTD. |
发明人 |
PARK, HYUNG SUN;LEE, SANG IK;KIM, CHANG IL |
分类号 |
H01L21/304;(IPC1-7):H01L21/304 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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