| 摘要 |
PURPOSE: A method for forming a contact hole of a semiconductor device is provided to obtain a small-sized contact hole having an enhanced profile and an improved selectivity to sub-material. CONSTITUTION: To form a small-sized contact hole(24), first an insulating layer(22) is formed on a semiconductor substrate(21), and second a photoresist layer(23) is deposited and patterned on the insulating layer(22). The insulating layer(22) is then selectively etched through the patterned photoresist layer(23) so that the substrate(21) is exposed. Next, the photoresist layer(23) is removed and then a cleaning step is performed. In particular, the etching process of the insulating layer(22) is performed by employing a high density plasma etching apparatus capable of controlling an etch rate and a selectivity to sub-material. In the etching process, RF power is applied in a range of 1000 to 3000 W and pressure is in a range of 10 to 30 mTorr. In addition, a mixed gas of carbon fluoride and carbon oxide is supplied with a flow rate in a range of 20 to 100 sccm(standard cubic cm per minute).
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