METHOD FOR FORMING ISOLATION LAYER OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming an isolation layer of a semiconductor device is provided to improve final reliability of a device by preventing degradation of the device due to a bird's beak. CONSTITUTION: A method for forming an isolation layer of a semiconductor device comprises the following steps. An oxide barrier is formed on an upper portion of a semiconductor substrate(21) of an active area. A nitride layer spacer(24) is formed at a side wall of the oxide barrier. A first field oxide layer(25) is grown on a semiconductor substrate of a field area by performing a first oxidation process. The first field oxide layer is removed by performing a wet etch process. A nitride layer(23) is formed on an upper portion of a whole structure and a front face of the structure is etched. A second field oxide layer(27) is grown by performing a second oxidation process. An isolation layer is completed by removing the nitride layer, the nitride layer spacer, and the oxide barrier.