METHOD FOR FORMING GATE OXIDE LAYER OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a gate oxide layer of a semiconductor device is provided to prevent a drop of electric characteristic due to doped impurity ions. CONSTITUTION: A method for forming a gate oxide layer of a semiconductor device comprises the following steps. One more diffusion barriers(13a) are formed within an oxide layer by adding selectively a gas of nitrogen series when performing an oxidation process for forming the oxide layer on a silicon substrate(11). The oxidation process is performed under the temperature of 600°C. to 800°C. and the atmosphere of O2 + H2O gas. The gas of the nitrogen series comprises any one of NH3, NO, and N2O.