| 摘要 |
PURPOSE: A method for fabricating minute and uniform contact holes by using a flow of a photoresist layer is provided. CONSTITUTION: An interlayer dielectric is formed on a semiconductor substrate having a certain element, and a photoresist pattern to be used as a contact mask is then formed on the interlayer dielectric by photolithography. Next, within thirty minutes, the photoresist layer is prebaked below glass transition temperature, for example, from 50 to 150°C, to remove solvent and moisture contained therein, and then cooled to room temperature. After the lapse of a certain time, for example, forty-eight hours, the photoresist layer is flowed to form the contact mask having a desired size. In an experimental case, the photoresist pattern having contact holes of 200nm is prebaked at 90°C for 90 seconds. After the lapse of five minutes, a contact hole pattern of 163nm is obtained by flowing at 130°C for 90 seconds, and after the lapse of two hours, a contact hole pattern of 165nm is obtained by flowing at 130°C for 90 seconds.
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