发明名称 |
MANUFACTURING METHOD OF PHASE INVERSION MASK IN SEMICONDUCTOR DEVICE |
摘要 |
PURPOSE: A manufacturing method of phase inversion mask is to achieve the simplification of the manufacturing process and to avoid the side rob effect, thereby improving yields of a semiconductor device. CONSTITUTION: A manufacturing method comprises the steps of: sequentially forming a phase inversion material(13) and a chromium film(15) on a quartz substrate(11), followed by forming a photoresist pattern(17) thereon; dry-etching the lower chromium film using a photoresist pattern as a mask and patterning it; dry-etching and removing the exposed phase inversion material; wet-etching the lower chromium film using the remaining photoresist pattern thereon as a mask; and removing the photoresist pattern.
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申请公布号 |
KR20000043235(A) |
申请公布日期 |
2000.07.15 |
申请号 |
KR19980059585 |
申请日期 |
1998.12.28 |
申请人 |
HYUNDAI ELECTRONICS IND. CO., LTD. |
发明人 |
HEO, IK BEOM |
分类号 |
H01L21/28;(IPC1-7):H01L21/28 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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