发明名称 MANUFACTURING METHOD OF PHASE INVERSION MASK IN SEMICONDUCTOR DEVICE
摘要 PURPOSE: A manufacturing method of phase inversion mask is to achieve the simplification of the manufacturing process and to avoid the side rob effect, thereby improving yields of a semiconductor device. CONSTITUTION: A manufacturing method comprises the steps of: sequentially forming a phase inversion material(13) and a chromium film(15) on a quartz substrate(11), followed by forming a photoresist pattern(17) thereon; dry-etching the lower chromium film using a photoresist pattern as a mask and patterning it; dry-etching and removing the exposed phase inversion material; wet-etching the lower chromium film using the remaining photoresist pattern thereon as a mask; and removing the photoresist pattern.
申请公布号 KR20000043235(A) 申请公布日期 2000.07.15
申请号 KR19980059585 申请日期 1998.12.28
申请人 HYUNDAI ELECTRONICS IND. CO., LTD. 发明人 HEO, IK BEOM
分类号 H01L21/28;(IPC1-7):H01L21/28 主分类号 H01L21/28
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