| 摘要 |
PURPOSE: A metal distribution layer of semiconductor device is provided by filling up the contact holes with the substance layers having a good step-coverage, but without a void, by using dual damascene process. CONSTITUTION: A method forming the metal distribution layer of semiconductor device contains the following processes: the processes to form the lower metal layers, the first inter layer dielectrics, an etch inhibition layer, and the first photo-resist pattern orderly; a process to form a contact hole which the first inter layer dielectrics were etched partially by over-etching the passivation layers; a process to fill up a substance layer pattern having a good step-coverage, in the contact holes; a process to form the second inter layer dielectric and the second photo-resist pattern on the etch inhibition layer and the substance layer pattern; a process to form a metal trench by etching the second inter layer dielectric and the first inter layer dielectric, and in a same time to open the lower metal layer; and a process to form a upper metal layer so as to be filled up into the contact hole and a metal trench
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