FABRICATION METHOD OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A fabrication of a semiconductor device is obtained by compensating the difference of a speed that the diffusion speed of Boron is greatly faster than Arsenic, when heat(thermal)-treating in case of using the poly silicons as a gate electrode. CONSTITUTION: A fabrication method of the semiconductor device contains of the following processes: a process to form the gate dielectric layers on the semiconductor substrate defined as NMOS region and PMOS region; a process to form the first gate pattern and the second gate pattern which are composed with a barrier substances, that were interposed between the undoped polysilicon of two layers to be composed vertically a grain boundary on gate dielectric layers and the undoped polysilicon of the two layers; a process to dope the impurity of N conductive type in NMOS region including the first gate pattern and P conductive type in PMOS region including the second gate pattern; and a process to form the gate electrode of NMOS and the gate electrode of PMOS by diffusing the impurity doped to the first and second gate patterns, and in a same time to form the diffusion regions of the source and drain impurities in the substrate at the both side of each gate electrode.