发明名称 |
VOLTAGE GENERATOR FOR ANTIFUSE PROGRAM |
摘要 |
PURPOSE: A voltage generator for an anti-fuse program is provided to increase charge pumping efficiency by preventing a breakdown. CONSTITUTION: An N+ junction is formed in an N well, and a P+ junction is formed in a P well. Thus, the junction between metals or poly lines to each well is strengthened. A P-typed substrate is grounded, and the N well intercepts the connection between the P well and the P-typed substrate. The N well is connected to node voltage the same with the P well in order to intercept current flow between wells. A breakdown voltage between the P-typed substrates is considerably high. Therefore, the breakdown voltage is not generated in the N well.
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申请公布号 |
KR20000042491(A) |
申请公布日期 |
2000.07.15 |
申请号 |
KR19980058658 |
申请日期 |
1998.12.24 |
申请人 |
HYUNDAI ELECTRONICS IND. CO., LTD. |
发明人 |
KIM, PIL JUNG;RYU, DEOK HYEON |
分类号 |
G11C29/00;(IPC1-7):G11C29/00 |
主分类号 |
G11C29/00 |
代理机构 |
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代理人 |
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地址 |
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