发明名称 CIRCUIT FOR TESTING MEMORY CELLS
摘要 PURPOSE: A circuit for testing memory cells is provided to test redundancy cells without fuse programming. CONSTITUTION: A circuit for testing memory cells comprises a precharging part(10) precharging a precharge node(N2) to a certain electric potential, a first precharge node potential regulating part(20) connecting the precharge node(N2) to a ground terminal and regulating the electric potential of the precharge node(N2) to test normal cells in response to a signal from a fuse box, a test signal generating part(30) generating a redundancy cell test signal, and a second precharge node potential regulating part connecting the precharge node(N2) to the ground terminal and regulating the electric potential of the precharge node(N2) to test redundancy cells in response to the test signal.
申请公布号 KR20000042474(A) 申请公布日期 2000.07.15
申请号 KR19980058641 申请日期 1998.12.24
申请人 HYUNDAI ELECTRONICS IND. CO., LTD. 发明人 KIM, IN HONG
分类号 H01L27/10;(IPC1-7):H01L27/10 主分类号 H01L27/10
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