METHOD OF FORMING METAL GATE ELECTRODE IN SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method of forming a metal gate electrode is to prevent the abnormal oxidation phenomena of a metal from being generated in a gate reoxidation process, without increasing thermal budget and deterioration of a gate insulation film. CONSTITUTION: A method of forming a metal gate electrode comprises the steps of: forming a gate isolation film(21) and a doped polysilicon layer(22) on a semiconductor substrate(20); forming on an upper portion of the whole structure a metal film(23) forming a conductive metal oxidation film on oxidation; selectively etching the metal film and the polysilicon layer to form a gate electrode pattern; and performing a gate reoxidation process.