发明名称 LATCH CIRCUIT IN SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE: A latch circuit in a semiconductor memory device is provided to secure the stable reading and writing operations in a semiconductor memory device. CONSTITUTION: After operating a sensing amplification, a sensing amplifier(110) is disabled by a sensing amplifying enable signal of low level. A latch input enable signal is disabled into low level. Therefore, a high level is output to the output data of an input unit(400) and an S-R typed flipflop(410) maintains current stored data. An output unit(420) turns on and holds the level of the signal inputted into an output buffer(140) not to be vibrate by disabling the latch input enable signal into low level and by enabling a latch output enable signal into high level at the same time.
申请公布号 KR20000042426(A) 申请公布日期 2000.07.15
申请号 KR19980058591 申请日期 1998.12.24
申请人 HYUNDAI ELECTRONICS IND. CO., LTD. 发明人 EOM, IN WHAN
分类号 G11C7/00;(IPC1-7):G11C7/00 主分类号 G11C7/00
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