| 摘要 |
PURPOSE: A photosensitive polymer having cyclic backbone and resist composition comprising the same are provided which have a sufficient resistance to dry etching and are used with excimer lasers to create a fine pattern line. CONSTITUTION: A photoresist composition comprising a photoacid generator and a photosensitive polymer for use in a chemically amplified photoresist represented by the chemical formula is described. In formula R1 is a C1 to C20 aliphatic hydrocarbon, R2,R4 are C1 to C7 aliphatic hydrocarbon, R3,R5 are each H or methyl, R6 is H or 2-hydroxyethyl, p/(p+q+r+s)=0.1-0.5, q/(p+q+r+s)=0.1-0.5, r/(p+q+r+s)=0.0-0.5, and s/(p+q+r+s)=0.01-0.5. The photosensitive polymer has a cyclic backbone containing an alicyclic compound and a molecular weight of 5,000 to 100,000.
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