METHOD FOR FORMING FINE CONTACT HOLE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a fine contact hole of a semiconductor device is provided to form a fine contact hole by using a chemical mechanical polishing method and a dry etch method. CONSTITUTION: A method for forming a fine contact hole of a semiconductor device comprises the following steps. Voids(8) between word lines(3) are narrowly formed when forming the word lines as a conductive layer on a semiconductor substrate(100). An insulating oxide layer(7) is formed when depositing an insulating oxide layer. An entrance portion of the voids of a contact hole area is exposed by polishing a predetermined thickness of the insulating oxide layer. The insulating oxide layer is etched to form a contact hole for exposing the silicon substrate of the contact hole area by using a dry etch method.