PROGRAM OF FLASH MEMORY CELL AND ELIMINATING METHOD THEREOF

摘要

PURPOSE: A program of a flash memory cell and an eliminating method thereof are provided to increase reliability of a device by improving a cycling endurance with reducing a source joint current. CONSTITUTION: To eliminate a flash memory cell, 10V voltage from a positive charge pump circuit(9) is fed to a control gate(5) and 5V voltage from a negative charge pump circuit(8) is fed to a source(6) at 10msec of pulse. A proper resistance is inserted between the source and the negative charge pump circuit. A drain(7) is floated and 0V voltage is fed to a semiconductor substrate(1). Therefore, stored electric charge is drawn to start an erase. A voltage depression is generated in source joint current by the resistance to reduce source voltage of the cell. Thus, a tunnel oxide film has low electric charge difference and source junction current is reduced.