| 摘要 |
PURPOSE: A method for forming load resistors and interconnection lines of SRAM is provided to improve interconnection properties and to increase load resistance. CONSTITUTION: In the formation of load resistors and interconnection lines, first a metal layer is formed on a semiconductor substrate(10) containing preformed layers therein. The metal layer is then selectively etched, and thereby the interconnection lines(11A) are formed to connect power supply and the load resistors. Next, a polysilicon layer is formed on and between the interconnection lines(11A), and subjected to a doping or an implantation process so that a required load resistance can be obtained. The polysilicon layer is then etched until the interconnection lines(11A) are exposed, so that load resistor patterns(12A) of polysilicon are obtained.
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