| 摘要 |
PURPOSE: A method for manufacturing a capacitor of a ferroelectric memory device is provided to prevent a short-circuit by maintaining an adhesive power and a surface roughness after a succeeding thermal process under oxygen atmosphere. CONSTITUTION: A method for manufacturing a capacitor of a ferroelectric memory device comprises the steps of: sequentially forming a Ti layer, a Ir layer and a Pt layer for a storage electrode of the capacitor on an oxidation layer formed on a semiconductor substrate; forming a multi-layer structure including at least (Pt,Ir)alloy layer, a IrTi3 layer and a Ti layer, by thermal-processing the Ti layer, the Ir layer and the Pt layer; forming a ferroelectric layer on the entire structure; and forming a plate electrode on the ferroelectric layer.
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