| 摘要 |
PURPOSE: A manufacturing method of a semiconductor device is to resolve Channeling effect and Facet effect, thereby improving reliability of source/drain region with thin junction depth. CONSTITUTION: A method for manufacturing a semiconductor device comprises the steps of: depositing a gate oxidation layer(13), a conductive layer(14), and an insulating layer on a semiconductor substrate(11); patterning the insulating layer and conductive layer as to form a gate electrode; forming an oxidation layer on the former treated layer; ion implanting the substrate with impurities using the gate electrode as a mask as to form a low concentration region on the substrate; depositing a polysilicon layer on the former substrate and etching the deposited layer as to form a polysilicon spacer(18); selectively epitaxial-growing a single and polycrystal silicon layers, respectively on the substrate and polysilicon spacer.
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