发明名称 INTERNAL POWER SUPPLY VOLTAGE GENERATOR OF SEMICONDUCTOR DEVICE
摘要 PURPOSE: An internal power supply voltage generator is provided to have a rapid recovery time and a large driving capacity by realizing comparison circuits having MOS transistors of different channel rates. CONSTITUTION: An internal power supply voltage generator comprises a first comparison circuit(100), a second comparison circuit(200) and an output drive circuit(300). The first comparison circuit(100) compares an internal power supply voltage(IVCC) on an output terminal(400) with a reference voltage(Vref) to output a first comparison signal(COM1) as a comparison result. The second comparison circuit(200) compares the internal power supply voltage(IVCC) with the reference voltage(Vref) to output a second comparison signal(COM2) as a comparison result. The output driving circuit(300) is connected between an external power supply voltage and the output terminal(400), and drives the output terminal(400) according to the second comparison signal(COM2). The MOS transistors(110,120,130,140,150) of the first comparison circuit(100) have more large channel rates than those of the second comparison circuit(200).
申请公布号 KR20000041361(A) 申请公布日期 2000.07.15
申请号 KR19980057220 申请日期 1998.12.22
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LIM, GYU NAM;CHA, GI WON
分类号 H03K17/00;(IPC1-7):H03K17/00 主分类号 H03K17/00
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