METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method of manufacturing a semiconductor device is to prevent the generation of a weak point on a metal layer formed as a conductive line on a contact hole having an oxide layer on its bottom edge. CONSTITUTION: A method of manufacturing a semiconductor device comprises the steps of: forming a gate(33) on a semiconductor substrate(31); forming an insulating layer(36) on the whole surface of the gate; selectively etching the insulating layer to form a first contact hole; forming an intermediate layer(39); forming a second contact hole by selectively etching the intermediate layer with the second contact hole wider than the first contact hole to expose the insulating layer on its bottom edge; and forming a conductive line(41).