TEST PATTERN OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A test pattern of a semiconductor device is provided to achieve a high integration of the semiconductor device by reducing a pattern volume and process steps of the semiconductor device. CONSTITUTION: A test pattern of a semiconductor device has a first conductive layer(11) formed with a first insulation layer and a bar-type second conductive layer(13) formed on the first conductive layer(11). The bar-type second conductive layer(13) is formed at an upper portion thereof with a second insulation layer. A third conductive layer(15) having a rectangular shape is formed on the second insulation layer. When the bar-type second conductive layer(13) is transversely formed, the third conductive layer(15) is arranged in a step-like form from a left lower portion of the second conductive layer(13) to a right upper portion of the second conductive layer(13).