METHOD OF FORMING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method of forming a semiconductor device is provided to improve a test signal strength characteristic by forming a landing plug with a grain-free amorphous silicon. CONSTITUTION: In a method of forming a semiconductor device, a bit line(11) is formed, and an insulation film(13) is formed on the bit line(11). A contact hole is formed by etching the insulation film(13). A landing plug(15) of a grain-free amorphous silicon is formed by implanting SiH4 with 800 to 1200 sccm and 1% PH3 with 2/20 at a temperature of 530 to 585°C in a pressure of 0.5 to 1.0 Torr.