METHOD FOR FORMING BARRIER LAYER OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a barrier layer of a semiconductor device is provided to reduce a thickness of a barrier layer. CONSTITUTION: A method for forming a barrier layer of a semiconductor device comprises the following steps. A silicon substrate(1) formed with an oxide layer(2) having a contact hole(3) is provided. A wetting layer(4) is formed on an inner wall and a base of the contact hole and the oxide layer. A first metal layer is deposited on the wetting layer. A predetermined gas is flowed on a surface of the first metal layer. A second metal layer is formed on the second metal layer. The flow process and the metal layer forming process are repeated until the metal layer of a predetermined thickness is formed.