METHOD FOR FORMING METAL LINE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a metal line of a semiconductor device is provided which can improve the reliability and yield of the metal line, by removing the pattern ring defect factor due to Al2O3 oxidation by-product generated locally on an aluminum layer during forming an aluminum metal line. CONSTITUTION: An Al2O3 film or a TiAl2 film(400) as an oxidation stopper is formed between an aluminum layer and a titanium nitride anti-reflection film, in order to prevent the generation of pattern ring defect of an aluminum metal line due to an Al2O3 oxidation by-product generated in rinsing the corroded aluminum layer using DI water. Thus, the method prevents the bridge fail between metal lines and improves the reliability and yield of the metal line.