METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to form a uniform thickness of a screen thin film by using an etch barrier. CONSTITUTION: A method for manufacturing a semiconductor device comprises the following steps. An accumulating structure of a gate insulating layer(14) and a gate electrode(16a) is formed on an upper portion of a wafer(12) with a chip area(I) and an EM box(II). A screen thin film(18) and an etch barrier are formed on the upper portion of the wafer. The etching barrier and an insulating layer having an etch selectivity are formed on an upper portion of the etch barrier. An insulating layer spacer(22) is formed at a side wall of the accumulating structure by etching the insulating layer. A thickness of the screen thin film is formed uniformly by etching the etch barrier.