FERROELECTRIC CAPACITOR OF SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

摘要

PURPOSE: A ferroelectric capacitor of a semiconductor device and fabrication method thereof is to minimize the leakage current followed by re-crystallizing thin SBT((Sr, Bi)Ta2O3) film that is ferroelectric material and compensate for the volatility of bismuth(Bi). CONSTITUTION: A ferroelectric capacitor fabrication method uses thin Bi2O3 film as dielectric layer and comprises the steps of: providing a semiconductor substrate having a planarizing insulating layer(20) formed thereon; depositing a lower electrode layer(21) of platinum(Pt) on the planarizing insulating layer; depositing a first thin Bi2O3 film(22) of amorphous state; depositing a polycrystalline SBT film(23) that is thicker than the Bi2O3 film on the first thin Bi2O3 film; depositing a second thin Bi2O3 film; and depositing an upper electrode layer(25) of platinum; patterning the stacked layers to form a capacitor; and thermally annealing the capacitor.