METHOD FOR FABRICATING FERROELECTRIC CAPACITOR OF NON VOLATILE MEMORY DEVICE

摘要

PURPOSE: A ferroelectric capacitor fabricating method is provided to prevent a titanium film from being diffused from a titanium adhesive film to a ferroelectric film. CONSTITUTION: In a ferroelectric capacitor fabricating method, interlayer insulation layers(14,16) are formed over an entire surface of a substrate(10) on which a word line and a bit line(15) are formed. A contact hole is formed in the interlayer insulation layers(14,16) so as to expose a junction of a transistor. A polysilicon film(17) is formed over the entire surface of the substrate(10), and then is polished so as to form a contact plug. A titanium film(18) is formed on a resultant structure, and a platinum film(19) is formed on the titanium film(18). An NbxOy film(20) is formed on the platinum film(19) by use of one of CVD, PVD and a spin on process.