发明名称 POROUS SILICON HUMIDITY SENSOR AND PRODUCING METHOD THEREOF
摘要 PURPOSE: A porous silicon humidity sensor and a producing method are provided to prevent the characteristic decrease of a sensor, to keep the characteristic of stoppage capacity-relative humidity, to improve efficiency and to drop price. CONSTITUTION: A first and a second insulation film(106a,106b) are formed on a silicon bulk. The second insulation film is selectively etched to expose a certain part of a rear face of the bulk by using a photosensitive pattern as a mask. A silicon diaphragm is formed by using the second insulation film as the mask and etching the rear face of the bulk into a certain thickness. After the same type impurities as the bulk are ion-inserted onto the rear face of the bulk, a humidity decreasing film of a porous silicon quality(108) is formed by making the silicon diaphragm porous. An upper electrode(110) is formed on a front face of the silicon bulk while a lower electrode(112) is formed on the rear face of the silicon bulk.
申请公布号 KR20000045048(A) 申请公布日期 2000.07.15
申请号 KR19980061560 申请日期 1998.12.30
申请人 AHN, BYUNG KWON 发明人 MIN, NAM GI;LEE, CHI U
分类号 G01N27/28;(IPC1-7):G01N27/28 主分类号 G01N27/28
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