| 摘要 |
PURPOSE: A method of forming a capacitor is provided to reduce a particle at a patterning step by forming a spacer around a post of a charge storage electrode. CONSTITUTION: A method of forming a capacitor comprises forming a first insulation film(23) on a silicon substrate(21) in which a junction region(22) is formed. A contact hole is formed by selectively etching the first insulation film(23), to thereby expose the junction region(22). A first polysilicon layer(25) is formed so as to fill the contact hole sufficiently. A second insulation film(26) and a second polysilicon layer(27) are sequentially formed on the first silicon layer. After patterning the second polysilicon layer(27), the second insulation film(26) and the first polysilicon layer(25), a polysilicon spacer(28) is formed at sidewalls of the patterned layers(27,26,25), to thereby form a charge storage electrode consisting of the second polysilicon layer(27), the second insulation film(26), the first polysilicon layer(25) and the spacer(28).
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