| 摘要 |
PURPOSE: A method for forming a metal gate electrode is provided to improve a quality of a film of a gate oxide film by preventing characteristic degradation of a gate electrode. CONSTITUTION: A method for forming a metal gate electrode comprises the following steps. A gate insulating layer(2), a PVD TiN(3), a doped silicon layer(4), a diffusion barrier(5), a refractory metal(6), and a first CVD insulating layer(7) are accumulated on a semiconductor substrate(1). The first CVD insulating layer, the doped silicon layer, the diffusion barrier, and the refractory metal are etched to form a gate electrode and expose the TiN by using a gate electrode mask. A dopant with a low density is implanted on the substrate by using the gate electrode as a mask. A spacer is formed as a second CVD insulating layer(8). The TiN is etched toward a lower portion of the spacer. A dopant with a high density is implanted on the substrate by using the gate electrode and the spacer as a mask. A dopant junction area of an LDD structure is formed by implanting the dopant with a high density.
|
