METHOD OF FORMING TITANIUM POLYCIDE GATE ELECTRODE

摘要

PURPOSE: A method of forming a titanium polycide gate electrode is to suppress an abnormal oxidation of a silicide film. CONSTITUTION: A method of forming a titanium polycide gate comprises steps of: forming a gate dielectric film(21) and a polysilicon film(22) on a semiconductor substrate(20); forming a titanium silicide film on the polysilicon film; etching the titanium silicide film and the polysilicon film to form a gate electrode pattern; and annealing the substrate under an atmosphere of N2 gas to form a TiN film on an exposed side wall of the titanium silicide film, and forming a silicon surplus region on the titanium silicide film; removing the TiN film; and processing a gate re-oxidation. The step of forming titanium silicide film includes a step of annealing the substrate to transform the titanium silicide film from an amorphous phase into a crystalline phase.