METHOD FOR MANUFACTURING FERROELECTRIC CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A ferroelectric capacitor manufacturing method of a semiconductor device is to effectively remove a carbon lack defect included in the thin film after depositing a BST(Ba1-xSrx) film and a oxygen lack defect induced in depositing a thin film. CONSTITUTION: A method for manufacturing a ferroelectric capacitor of a semiconductor device comprises the steps of: forming a lower electrode conductive film (11) on a predetermined lower layer(10); forming a Ta2O5 film(12) on the upper portion of the lower electrode conductive film; plasma processing the Ta2O5 film by using an ozone gas; and forming an upper electrode conductive film on the upper portion of the Ta2O5 film. The method further comprises performing a crystallization heat treatment of the Ta2O5 film in oxidation atmosphere of 700-900°C after the plasma processing. Also, the method further comprises partially nitrifying the surface of the lower electrode conductive film.