FABRICATION METHOD OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A fabrication method of semiconductor device is provided to form junction area of desired depth without affecting the performance of transistors, thereby preventing the increase of contact resistance and the degradation of short channel effect and punch through performance. CONSTITUTION: A fabrication method of semiconductor device comprises steps of: forming a first low density impurity area by n-impurity ion injection; forming first and second insulation films; forming a first photosensitive film pattern and dry-etching the second insulation film to form a second insulation film spacer on side wall of a gate electrode; forming a first high density impurity area by n+ impurity ion injection; forming a first insulation spacer by removal of the second insulation film spacer and wet-etching of the first insulation film; forming a second high density impurity area and then removing the first photosensitive film pattern; and forming second photosensitive pattern and insulation film spacer.