METHOD FOR PLANARIZING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A planarizing method is to increase a marginal degree of a mask process, an etching process and a metal deposition process and to remove an increase of contact resistance and prevent degradation of leakage current characteristic in a junction region. CONSTITUTION: A method for planarizing a semiconductor device comprises the steps of: providing a substrate having a cell region and a peripheral region; flattening firstly the regions by using a first photosensitive film; forming a second photosensitive film, a first sacrificing insulation film and a third photosensitive film in order on entire top surface; forming a metal line(152) after removing the photosensitive films; depositing a metal interlayer insulation film(121) on entire top surface and flattening secondly the regions by using a fourth photosensitive film; forming a fifth photosensitive film, a second sacrificing insulation film and a sixth photosensitive film in order on entire top surface; removing an exposed metal line in the cell region and then removing the fourth and the fifth photosensitive films in the peripheral region.