| 摘要 |
PURPOSE: A fabrication method of a capacitor in a ferroelectric memory device is provided to prevent a deterioration of a ferroelectric layer due to reducing gas. CONSTITUTION: On a semiconductor substrate(201) having a device isolation(202), a gate oxide layer(203), a word line(204), an insulating spacer(205) and a contact region(206) are successively formed. Next, an interlayer dielectric(207) is deposited on overall surfaces, and then a ferroelectric capacitor including a lower electrode(208), a ferroelectric layer(209) and an upper electrode(210) is formed thereon. Next, a polysilicon layer is deposited and then oxidized into a silicon oxide layer. At this time, since enough oxygen provides for the ferroelectric layer(209) by diffusion through the silicon oxide layer, the deteriorated ferroelectric layer(209) recovers a ferroelectric characteristic thereof. Then, the silicon oxide layer is partly or wholly turned into a nitride layer(211B). Next, another interlayer dielectric(212) is deposited on the nitride layer(211B) and etched to expose the upper electrode(210). Finally, a metal wiring(213) is formed onto the upper electrode(210).
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