FUSE STRUCTURE OF SEMICONDUCTOR MEMORY

摘要

PURPOSE: A fuse structure of a semiconductor memory is provided to perform a replacement into a redundancy cell through a fuse connection using a connection of a gate and an active according to a breakdown voltage of a gate oxide film. CONSTITUTION: In a fuse structure of a semiconductor memory, a plurality of active regions(22A-22C) are formed on a semiconductor substrate so as to be spaced apart from each other through a field region(21). A plurality of gates(23A-23C) are formed so as to share each active region and the field region(21) partially. A voltage applying pad(25) is connected to the gates(23A-23C) through wires(24) so as to be applied a gate oxide film breakdown voltage selectively. A wire(27) is connected to the active regions(22A-22C) so as to be grounded.