METHOD FOR FORMING INTERLAYER DIELECTRIC OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming an interlayer dielectric of a semiconductor device is provided to remove an aperture generated between a wiring and a wiring by using a rapid thermal process. CONSTITUTION: A method for forming an interlayer dielectric of a semiconductor device comprises the following steps. A conductive layer is formed on a semiconductor substrate(1) formed with an insulating layer(2). A wiring(3) is formed by patterning the conductive layer. An etching barrier is formed on a whole upper portion of the substrate. A glass insulating layer(5) is deposited on the etch barrier in order to bury a gap between the wiring and the wiring. An aperture(6) within the glass-insulating layer is removed. A rapid thermal process for the glass-insulating layer is performed to bury the glass insulating layer between the wiring and the wiring.