METHOD FOR FORMING METAL LINE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a metal line of a semiconductor device is provided to solve the problems of heavy metal contamination by depositing a copper on a semiconductor substrate selectively with an electroplating method. CONSTITUTION: To prevent the diffusion of copper by isolating a copper layer(14) completely with a copper diffusion-resistant film(15), a method for forming a metal line includes the steps of: forming a barrier metal layer(12) and an oxide(13) on a semiconductor substrate(11) where several components are formed to form a semiconductor device; forming an oxide film pattern for a selected region of the barrier metal layer to be revealed by etching the oxide; etching the copper layer on the revealed barrier metal layer between the oxide film pattern through an electrolysis process; etching the revealed barrier metal layer using the copper layer as a mask, after removing the oxide film pattern; and forming the diffusion-resistant film and an insulation film(16) on the whole structure including the copper layer. The method can be applied in a semiconductor device above 0.15 micro meter design rule.