METHOD FOR FORMING POLYCIDE INTERCONNECTION OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a polycide interconnection of a semiconductor device is provided which can improve the reliability and the fabrication yield of the semiconductor device. CONSTITUTION: A method for forming a polycide interconnection(31) improves the notching phenomenon by performing a main etch process in a state of increased selectivity with a photoresist film, and also improves the undercut phenomenon by performing an over etch process in a state of decreased positive ion without varying the etch rate. The method performs the main etch process in a state of increased selectivity with the photoresist film by that a source power generating plasma is maintained low and a bias power formed in a wafer is maintained low and a pressure is maintained high to minimize the mean free path of positive ion, and the method performs the over etch process in a state that the number of positive ions is decreased by reducing the source power and the energy of positive ion is increased by increasing the bias power to compensate the reduction of etch rate according to the reduction of the source power.